Search results for "Fused quartz"
showing 5 items of 5 documents
Structure and Doping Determined Thermoelectric Properties of Bi2Se3Thin Films Deposited by Vapour–Solid Technique
2019
In this work, a simple catalyst-free vapour-solid deposition method was applied for controlled deposition of two types (planar and disordered) of continuous Bi 2 Se 3 nanostructured thin films on different (fused quartz/glass, mica, graphene) substrates. Characterisation of electron transport (type, concentration and mobility of the main charge carriers) and thermoelectric properties (Seebeck coefficient and power factor) showed that proposed in this work deposition method allows to obtain Bi 2 Se 3 thin films with power factor comparable and even higher than reported for the Bi 2 Se 3 thin films grown by molecular beam epitaxy technique. Power factor of the best obtained thin films can be …
Structure-determined thermoelectric properties of Bi2Se3 thin films deposited by vapour-solid technique
2018
International audience; In this work, a simple catalyst-free vapour-solid deposition method is applied for controlled obtaining of two types (planar and disordered) continuous Bi2Se3 nanostructured thin films on different (fused quartz/glass, mica, graphene) substrates. Performed for the deposited thin films transport and thermoelectric characterization (type, concentration and mobility of the main charge carriers, Seebeck coefficient and power factor) showed that proposed deposition method allows to fabricate “low-doped” Bi2Se3 thin films with power factor comparable and even higher than reported for the Bi2Se3 thin films fabricated by molecular beam epitaxy technique.
Radiation induced generation of non-bridging oxygen hole center in silica: Intrinsic and extrinsic processes
2007
Abstract The generation of non-bridging oxygen hole center ( Si–O ) was investigated in a wide variety of natural (fused quartz) and synthetic silica samples exposed to different γ- and β-irradiation doses by looking at its optical bands. We distinguish two different generation processes: intrinsic associated with the cleavage of Si–O bond and characterized by a sublinear law and extrinsic due to the conversion of OH precursor characterized by a growth curve with a saturating tendency. The interplay between the two processes and the role of H are discussed.
Growth of paramagnetic defects by gamma rays irradiation in oxygen-deficient silica
2005
Abstract We report an electron paramagnetic resonance (EPR) study of gamma rays irradiation effects on an oxygen-deficient silica obtained from fused quartz. We have found that three types of E′ centers, E α ′ , E γ ′ and E δ ′ , and a paramagnetic defect in a spin triplet state (S = 1) are induced. The EPR signals dependence on the microwave power have been investigated. The concentrations of these centers as a function of gamma ray irradiation show that for high dose a limit value is reached suggesting a generation process from precursors.
Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in ther…
2021
This work was supported by the European Regional Development Fund (ERDF) project No 1.1.1.1/16/A/257. J. A. acknowledges the ERDF project No. 1.1.1.2/1/16/037. Institute of Solid State Physics, University of Latvia, Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017 TeamingPhase2 under grant agreement No. 739508, project CAMART2 . The raw/processed data required to reproduce these findings cannot be shared at this time as the data also form a part of an ongoing study.